The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Sep. 30, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Che-Cheng Chang, New Taipei, TW;
Chih-Han Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H01L 21/3213 (2006.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6217 (2025.01); H01L 21/32133 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H10D 30/024 (2025.01); H10D 64/017 (2025.01); H10D 64/518 (2025.01); H10D 64/661 (2025.01); H10D 64/666 (2025.01); H10D 64/667 (2025.01); H10D 30/797 (2025.01);
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The gate stack includes a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion.