The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Aug. 27, 2021
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Fu-Chiang Kuo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate containing first-type deep trenches and second-type deep trenches. The first-type deep trenches and the second-type deep trenches have lengthwise sidewalls that laterally extend along different directions. The semiconductor structure includes a capacitor structure, which includes a layer stack containing at least three metallic electrode layers interlaced with at least two node dielectric layers. Each layer within the layer stack includes a horizontally-extending portion that overlies a top surface of the substrate and vertically-extending portions that protrude downward into a respective one of the first-type deep trenches and second-type deep trenches. The different orientations of the lengthwise directions of the deep trenches reduces deformation of the semiconductor structure. Stress-relief structures may be formed in corner regions of the capacitor structure to provide structural reinforcement.