The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Dec. 27, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Christine Y. Ouyang, Hsinchu, TW;

Ziwei Fang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02348 (2013.01); C23C 16/02 (2013.01); C23C 16/45529 (2013.01); C23C 16/45536 (2013.01); H01L 21/02172 (2013.01); H01L 21/0262 (2013.01); H01L 21/28556 (2013.01); H01L 21/76825 (2013.01); H01L 21/76862 (2013.01); H10D 84/014 (2025.01); H10D 84/038 (2025.01);
Abstract

The present disclosure relates to a method of fabricating a semiconductor structure, the method includes forming an opening and depositing a metal layer in the opening. The depositing includes performing one or more deposition cycles, wherein each deposition cycle includes flowing a first precursor into a deposition chamber and performing an ultraviolet (UV) radiation process on the first precursor. The method further includes performing a first purging process in the deposition chamber to remove at least a portion of the first precursor, flowing a second precursor into the deposition chamber, and purging the deposition chamber to remove at least a portion of the second precursor.


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