logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12325919 B1

PDFFull Text
Date of Patent:
Jun. 10, 2025

Filed:

Aug. 21, 2020

Apparatus for processing substrate

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Masahiro Tabata, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Ram N Kackar

Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/24 (2006.01); C23C 16/26 (2006.01); C23C 16/455 (2006.01); C23C 16/507 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/24 (2013.01); C23C 16/26 (2013.01); C23C 16/45536 (2013.01); C23C 16/507 (2013.01); C23C 16/56 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 37/32715 (2013.01); H01J 37/32899 (2013.01); H01L 21/306 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/334 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/31116 (2013.01);
Abstract

An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.

Find Patent Forward Citations

Loading…