The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jun. 16, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Anindya Nath, Essex Junction, VT (US);
Robert J. Gauthier, Jr., Williston, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/00 (2025.01); H10D 1/47 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/911 (2025.01); H10D 1/47 (2025.01); H10D 89/711 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to an electrostatic discharge device (ESD) with a pinch resistor and methods of manufacture. The structure includes: a semiconductor substrate; a shallow trench isolation structure extending into the semiconductor substrate; an amorphous layer in the semiconductor substrate and below the shallow trench isolation structure; and a pinch resistor between the shallow trench isolation structure and the amorphous layer.