The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Sep. 25, 2020
Intel Corporation, Santa Clara, CA (US);
Carl Hugo Naylor, Portland, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Chelsey Jane Dorow, Portland, OR (US);
Kirby Kurtis Maxey, Hillsboro, OR (US);
Tanay Arun Gosavi, Hillsboro, OR (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
Urusa Shahriar Alaan, Hillsboro, OR (US);
Uygar E. Avci, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.