The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
May. 19, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chih-Yu Chang, New Taipei, TW;
Chun-Chieh Lu, Taipei, TW;
Yu-Chien Chiu, Hsinchu County, TW;
Ya-Yun Cheng, Taichung, TW;
Yu-Ming Lin, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Hung-Wei Li, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a gate, a ferroelectric layer disposed on the gate; a first channel layer disposed on the ferroelectric layer, a second channel layer disposed on the ferroelectric layer, and source and drain regions disposed on the first channel layer. The first channel layer includes a first thickness and the second channel layer includes a second thickness. A ratio of the first thickness and the second thickness is less than ⅗.