The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsiang-Wei Liu, Tainan, TW;

Yao-Jen Yang, Hsinchu County, TW;

Meng-Sheng Chang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 20/20 (2023.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H10B 20/20 (2023.02); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 23/5252 (2013.01);
Abstract

In one aspect of the present disclosure, a semiconductor device is disclosed. In some embodiments, the semiconductor device includes a first conductive structure extending in a first direction, the first conductive structure coupled to a metal-oxide-semiconductor (MOS) device; a second conductive structure extending in the first direction and spaced from the first conductive structure in a second direction perpendicular to the first direction; a dielectric material extending in the second direction and disposed over, in a third direction perpendicular to the first direction and the second direction, the first conductive structure; and a via structure disposed over the second conductive structure and in contact with the dielectric material, wherein the dielectric material is configured to create a channel between the first conductive structure and the via structure when a voltage is applied to the second conductive structure.


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