The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Aug. 07, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jia-Chuan You, Taoyuan County, TW;
Kuan-Ting Pan, Taipei, TW;
Shi Ning Ju, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu County, TW;
Chia-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Devices and methods that a first gate structure wrapping around a channel layer disposed over the substrate, a second gate structure wrapping around another channel layer disposed over the substrate and a dielectric fin structure formed over a shallow trench isolation (STI) feature and between the first and second gate structures. At least one metallization layer is formed on the first gate structure, the dielectric fin structure, and the second gate structure and contiguously extends from the first gate structure to the second gate structure.