The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Dec. 21, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Po-Hao Tseng, Taichung, TW;

Feng-Min Lee, Hsinchu, TW;

Tian-Cih Bo, Zhubei, TW;

Ming-Hsiu Lee, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0614 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01);
Abstract

A memory device is provided. The memory device includes channel layers, word lines, memory layers disposed between the channel layers and the word lines, and memory cells defined at cross-points of the channel layers and the word lines. The memory device is configured for performing a first operation for m times and a second operation for n times, and m is equal to or larger than n. In the first operation, a first electric field is produced in a portion of the memory layers. The word lines are configured for producing a second electric field in the second operation in the portion of the memory layers, and a field direction of the second electric field is different from a field direction of the first electric field.


Find Patent Forward Citations

Loading…