The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jul. 31, 2023
Tawian Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jui-Cheng Huang, Hsinchu, TW;
Yi-Hsien Chang, Changhua County, TW;
Chin-Hua Wen, Maioli County, TW;
Chun-Ren Cheng, Hsinchu, TW;
Shih-Fen Huang, Jhubei, TW;
Tung-Tsun Chen, Hsinchu, TW;
Yu-Jie Huang, Kaohsiung, TW;
Ching-Hui Lin, Taichung, TW;
Sean Cheng, Hsinchu, TW;
Hector Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.