The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Apr. 22, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Guo-Huei Wu, Hsinchu, TW;
Shih-Wei Peng, Hsinchu, TW;
Wei-Cheng Lin, Hsinchu, TW;
Hui-Zhong Zhuang, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Li-Chun Tien, Hsinchu, TW;
Lee-Chung Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes fabricating a first-voltage underlayer power rail conductively connecting to the source region of a first-type transistor and fabricating a second-voltage underlayer power rail conductively connecting to the source region of a second-type transistor. Each of the first-voltage and second-voltage underlayer power rails extends in a first direction. The method also includes patterning a first connection layer to form a first-voltage power rail and a second-voltage power rail extending in the second direction which is perpendicular to the first direction. The first-voltage power rail is directly connected with the first-voltage underlayer power rail through a first via-connector and the second-voltage power rail is directly connected with the second-voltage underlayer power rail through a second via-connector.