The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Apr. 26, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Cheng Shiau, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Methods for forming improved isolation features in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes etching a first trench in a substrate; depositing a first insulation layer in the first trench with a first flowable chemical vapor deposition process; depositing a second insulation layer on the first insulation layer with a second flowable chemical vapor deposition process, the second flowable chemical vapor deposition process having process parameters different from the first flowable chemical vapor deposition process, and a portion of the first trench remaining unfilled by the first insulation layer and the second insulation layer; and forming an insulating fin in the portion of the first trench unfilled by the first insulation layer and the second insulation layer.