The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Mar. 09, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu-Ting Liu, Taoyuan, TW;
Yu-Jen Wang, Hsinchu, TW;
Chih-Pin Chiu, Hsinchu, TW;
Hung-Chao Kao, Taipei, TW;
Chih-Chuan Su, Hsinchu, TW;
Liang-Wei Wang, Hsinchu, TW;
Chen-Chiu Huang, Taichung, TW;
Dian-Hau Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor memory structure includes forming an MTJ stack over a substrate. The method also includes etching the MTJ stack to form an MTJ device. The method also includes depositing a metal layer over a top surface and sidewalls of the MTJ device. The method also includes oxidizing the metal layer to form an oxidized metal layer. The method also includes depositing a cap layer over the oxidized metal layer. The method also includes oxidizing the cap layer to form an oxidized cap layer. The method also includes removing an un-oxidized portion of the cap layer.