Semiconductor device and manufacturing method thereof

Abstract

A method of manufacturing a semiconductor device is provided. The method comprises the following steps of forming a first semiconductor layer over a substrate, the first semiconductor layer comprising a first semiconductor material; etching the first semiconductor layer to form a first recess; forming a second semiconductor layer in the first recess, the second semiconductor layer comprising a second semiconductor material different from the first semiconductor material; etching the first semiconductor layer and the second semiconductor layer to form a first fin comprising the second semiconductor layer and the first semiconductor layer; forming an insulation material over the substrate, wherein a top surface of the insulation material is flush with a top surface of the first fin; performing an implantation process on the first fin to form an implant region near the top surface of the first fin; and partially removing the insulation material to form shallow trench isolation regions, wherein the first fin is sandwiched by two adjacent shallow trench isolation regions.