The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Feb. 16, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chien-Han Chen, Nantou County, TW;
Shih-Yu Chang, Yunlin County, TW;
Chien-Chih Chiu, Xinying, TW;
Huang-Ming Chen, Hsinchu, TW;
Jyu-Horng Shieh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a transistor comprising a source/drain region and a gate electrode, forming a source/drain contact plug over and electrically connecting to the source/drain region, forming a first inter-layer dielectric over the source/drain contact plug, forming an etch stop layer over the first inter-layer dielectric, etching the etch stop layer to form a first via opening, forming a second inter-layer dielectric over the first inter-layer dielectric, performing an etching process, so that the second inter-layer dielectric is etched to form a trench, and the first via opening in the etch stop layer is extended into the first inter-layer dielectric to reveal the source/drain contact plug, and filling the trench and the first via opening in common processes to form a metal line and a via, respectively.