The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Apr. 18, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jian-Jou Lian, Tainan, TW;
Chun-Neng Lin, Hsinchu, TW;
Chieh-Wei Chen, Taoyuan, TW;
Tzu-Ang Chiang, I-lan, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C09K 13/00 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C09K 13/00 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28097 (2013.01); H10D 30/024 (2025.01); H10D 64/691 (2025.01); H10D 84/0135 (2025.01); H10D 84/038 (2025.01); H01L 21/0276 (2013.01); H01L 21/32139 (2013.01); H01L 21/76224 (2013.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01);
Abstract
In a wet etching process to pattern a metal layer such as a p-metal work function layer over a dielectric layer such as a high-k gate dielectric layer, a selectivity of the wet etching solution between the metal layer and the dielectric layer is increased utilizing an inhibitor. The inhibitor includes such inhibitors as a phosphoric acid, a carboxylic acid, an amino acid, or a hydroxyl group.