The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Dec. 22, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masahiro Tabata, Miyagi, JP;

Sho Kumakura, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01);
Abstract

A substrate processing apparatus includes: a chamber having at least one gas inlet and at least one gas outlet; a substrate support disposed in the chamber; and a controller. The controller causes (a) placing a substrate on the substrate support, the substrate including a base layer and a first layer formed on the base layer; (b) etching the first layer to form a recess in the first layer; (c) when determined that the recess satisfies a predetermined condition, forming a first film on a bottom surface of the recess by forming an inhibitor on the bottom surface of the recess, a predetermined gas species being not adsorbed to the first film; (c) after (b), forming a second film on a side wall of the recess using the predetermined gas species as a precursor gas; and (d) etching the first layer through the recess.


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