The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Aug. 02, 2023
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Michael J. Rondon, Santa Rosa, CA (US);
Jon Sigurdson, Santa Barbara, CA (US);
Eric R. Miller, Orcutt, CA (US);
Assignee:
RAYTHEON COMPANY, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 7/12 (2006.01); C23C 14/18 (2006.01); C25D 3/54 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
C25D 7/12 (2013.01); C23C 14/18 (2013.01); C25D 3/54 (2013.01); C25D 7/123 (2013.01); H01L 24/10 (2013.01);
Abstract
A wafer stack can be produced by using indium electroplating on physical vapor deposition tantalum. The wafer stack includes a substrate, a tantalum-nitride film formed on the substrate, a tantalum layer formed on the tantalum-nitride film, and indium deposited on the tantalum layer. Various relationships of thicknesses between the tantalum layer and the tantalum-nitride film can be used in producing the wafer stack.