The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jan. 11, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaeyong Lee, Suwon-si, KR;
Hidong Kwak, Suwon-si, KR;
Minjung Shin, Suwon-si, KR;
Seungryeol Oh, Suwon-si, KR;
Chuhee Lee, Suwon-si, KR;
Byunghyun Hwang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device measurement method using X-ray scattering includes preparing a semiconductor device including a repeat structure, irradiating X-rays onto the semiconductor device to obtain a first X-ray scattering image, calculating a second X-ray scattering image through simulation, the second X-ray scattering image corresponding to a target repeat structure for the semiconductor device, generating a repeat structure mask by analyzing a position of a signal for a regular repeat structure from the second X-ray scattering image, removing the repeat structure mask from the first X-ray scattering image and generating an error image; and analyzing the error image and calculating irregularities for the repeat structure of the semiconductor device.