The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Aug. 01, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Chun-Chieh Lu, Taipei, TW;
Mauricio Manfrini, Zhubei, TW;
Marcus Johannes Hendricus Van Dal, Linden, BE;
Chih-Yu Chang, Taipei, TW;
Sai-Hooi Yeong, Zhubei, TW;
Yu-Ming Lin, Hsinchu, TW;
Georgios Vallianitis, Heverlee, BE;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.