The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jan. 24, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Meng-Han Lin, Hsinchu, TW;
Chia-En Huang, Hsinchu County, TW;
Han-Jong Chia, Hsinchu, TW;
Yi-Ching Liu, Hsinchu, TW;
Sheng-Chen Wang, Hsinchu, TW;
Feng-Cheng Yang, Hsinchu County, TW;
Chung-Te Lin, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/522 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/5226 (2013.01); H10B 43/10 (2023.02);
Abstract
A memory device includes a first signal line, a second signal line, a first memory cell and a plurality of second memory cells. The first memory cell is coupled to the first signal line. Each of the second memory cells has a first terminal coupled to the first signal line through the first memory cell and a second terminal coupled to the second signal line.