The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jun. 21, 2023
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Min-Hsun Hsieh, Hsinchu, TW;

Hsin-Mao Liu, Hsinchu, TW;

Ying-Yang Su, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 25/0753 (2013.01); H01L 27/156 (2013.01); H01L 33/50 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 33/508 (2013.01); H01L 33/60 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/83886 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2-150.


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