The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Mar. 06, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Teng Liao, Hsinchu, TW;
Chia-Cheng Tai, Tainan, TW;
Tzu-Chan Weng, Kaohsiung, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Chih Hsuan Cheng, Houlong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes forming a semiconductor fin extending a first height above a substrate, forming a dummy dielectric material over the semiconductor fin and over the substrate, forming a dummy gate material over the dummy dielectric material, the dummy gate material extending a second height above the substrate, etching the dummy gate material using multiple etching processes to form a dummy gate stack, wherein each etching process of the multiple etching processes is a different etching process, wherein the dummy gate stack has a first width at the first height, and wherein the dummy gate stack has a second width at the second height that is different from the first width.