The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jun. 15, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wen-Hsiung Lu, Tainan, TW;
Ming-Da Cheng, Taoyuan, TW;
Chia-Li Lin, Tainan, TW;
Yu-Chih Huang, Hsinchu, TW;
Chen-Shien Chen, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 24/94 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/06517 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80379 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/94 (2013.01); H01L 2924/20102 (2013.01); H01L 2924/20105 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01);
Abstract
In an embodiment, a device includes: a dielectric layer over an active surface of a semiconductor substrate; a conductive via in the dielectric layer, the conductive via including a first copper layer having a non-uniform grain orientation; and a bonding pad over the conductive via and in the dielectric layer, the bonding pad including a second copper layer having a uniform grain orientation, a top surface of the bonding pad being coplanar with a top surface of the dielectric layer.