The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
May. 09, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Da-Jun Lin, Kaohsiung, TW;
Chin-Chia Yang, Tainan, TW;
Tai-Cheng Hou, Tainan, TW;
Fu-Yu Tsai, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 23/522 (2006.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02348 (2013.01); H01L 23/5226 (2013.01); H10D 64/251 (2025.01);
Abstract
A warpage-reducing semiconductor structure includes a wafer. The wafer includes a front side and a back side. Numerous semiconductor elements are disposed at the front side. A silicon oxide layer is disposed at the back side. A UV-transparent silicon nitride layer covers and contacts the silicon oxide layer. The refractive index of the UV-transparent silicon nitride layer is between 1.55 and 2.10.