The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Sep. 09, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Kosuke Horibe, Yokkaichi Mie, JP;

Kei Watanabe, Yokkaichi Mie, JP;

Shinya Okuda, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/76801 (2013.01); H10B 43/27 (2023.02); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insulating film covering at least part of the stair part; a second insulating film covering at least part of the first insulating film and different from the first insulating film; and a contact connected with one of the plurality of conductor layers and penetrating through the first insulating film and the second insulating film. The linear expansion coefficient of the second insulating film is larger than the linear expansion coefficient of the first insulating film.


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