The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Mar. 06, 2024
Applicant:
Agc Inc., Tokyo, JP;
Inventors:
Hirotomo Kawahara, Tokyo, JP;
Daijiro Akagi, Tokyo, JP;
Hiroaki Iwaoka, Tokyo, JP;
Toshiyuki Uno, Tokyo, JP;
Michinori Suehara, Tokyo, JP;
Keishi Tsukiyama, Tokyo, JP;
Assignee:
AGC INC., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01); G03F 1/24 (2012.01); G03F 1/48 (2012.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); G03F 1/24 (2013.01); G03F 1/48 (2013.01);
Abstract
The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layerincluding ruthenium (Ru) and nitrogen (N), and the layerhas an absolute value of a film stress of 1,000 MPa or less.