The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Jan. 19, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2024.12); H01G 4/10 (2005.12); H10D 1/00 (2024.12); H10B 12/00 (2022.12);
U.S. Cl.
CPC ...
H10D 1/696 (2024.12); H01G 4/10 (2012.12); H10D 1/042 (2024.12); H10D 1/694 (2024.12); H10D 1/716 (2024.12); H10B 12/30 (2023.01); H10D 1/68 (2024.12);
Abstract
Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a base; forming a bottom electrode layer on the base, wherein a crystal structure of the bottom electrode layer includes a tetragonal crystal system; forming a first dielectric layer on a surface of the bottom electrode layer by using the bottom electrode layer as a seed layer, wherein a crystal structure of the first dielectric layer includes a tetragonal crystal system; and forming a first current blocking layer on a surface of the first dielectric layer.