The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Mar. 30, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Fu-Chiang Kuo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2005.12); H01L 21/768 (2005.12); H01L 23/48 (2005.12); H01L 49/02 (2005.12);
U.S. Cl.
CPC ...
H01L 29/945 (2012.12); H01L 21/76877 (2012.12); H01L 21/76898 (2012.12); H01L 23/481 (2012.12); H01L 28/91 (2012.12);
Abstract

A semiconductor die includes an array of first capacitor regions, each of the first capacitor regions including multiple first capacitor cell structures, wherein each first capacitor cell structure includes a plurality of first trench segments characterized by a first trench length, a first trench width, and a first trench spacing, and a first air gap width in a gap-filling material. The semiconductor die also includes a plurality of second capacitor regions interspersed in the array of first capacitor regions, each of the second capacitor region including multiple second capacitor cell structures, wherein each second capacitor cell structures includes a plurality of second trench segments characterized by a second trench length, a second trench width, a second trench spacing, and a second air gap width in the gap-filling material.


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