The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Sep. 28, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Vvss Satyasuresh Choppalli, Bangalore, IN;
Anupam Dutta, Bangalore, IN;
Rajendran Krishnasamy, Essex Junction, VT (US);
Robert Gauthier, Jr., Williston, VT (US);
Xiang Xiang Lu, Essex Junction, VT (US);
Anindya Nath, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures including multiple semiconductor devices and methods of forming same. The structure comprises a first device structure including a first well and a second well in a semiconductor substrate, a second device structure including a doped region in the semiconductor substrate, and a first high-resistivity region in the semiconductor substrate. The first well has a first conductivity type, the second well has a second conductivity type opposite to the first conductivity type, and the first well adjoins the second well to define a p-n junction. The doped region of the second device structure has the first conductivity type or the second conductivity type. The high-resistivity region has a higher electrical resistivity than the semiconductor substrate, and the high-resistivity region is positioned between the first device structure and the second device structure.