The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Aug. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Chao Chiu, Hsinchu, TW;
Yu-Wen Chen, Hsinchu, TW;
Yong-Jin Liou, Hsinchu, TW;
Chun-Wei Chang, Tainan, TW;
Ching-Sen Kuo, Taipei, TW;
Feng-Jia Shiu, Jhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Double patterning techniques described herein may reduce corner rounding, etch loading, and/or other defects that might otherwise arise during formation of a deep trench isolation (DTI) structure in a pixel array. The double patterning techniques include forming a first set of trenches in a first direction and forming a second set of trenches in a second direction in a plurality of patterning operations such that minimal to no etch loading and/or corner rounding is present at and/or near the intersections of the first set of trenches and the second set of trenches.