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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12288822 B1

PDFFull Text
Date of Patent:
Apr. 29, 2025

Filed:

Jun. 21, 2023

Semiconductor device with source/drain contact

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wen-Che Tsai, Hsinchu, TW;

Min-Yann Hsieh, Kaohsiung, TW;

Hua-Feng Chen, Hsinchu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Raj R Gupta

Int. Cl.
CPC ...
H01L 29/78 (2005.12); H01L 21/768 (2005.12); H01L 23/485 (2005.12); H01L 23/522 (2005.12); H01L 23/528 (2005.12); H01L 29/165 (2005.12); H01L 29/417 (2005.12); H01L 29/66 (2005.12);
U.S. Cl.
CPC ...
H01L 29/7851 (2012.12); H01L 21/76804 (2012.12); H01L 21/76831 (2012.12); H01L 21/76897 (2012.12); H01L 23/5226 (2012.12); H01L 23/5283 (2012.12); H01L 29/41766 (2012.12); H01L 29/41791 (2012.12); H01L 29/66545 (2012.12); H01L 29/66795 (2012.12); H01L 23/485 (2012.12); H01L 29/165 (2012.12); H01L 29/7848 (2012.12); H01L 2029/7858 (2012.12);
Abstract

A semiconductor device includes a substrate, an epitaxial structure over the substrate, a conductive structure, and a dielectric liner. The conductive structure extends from within the epitaxial structure to above the epitaxial structure. The dielectric liner extends along a sidewall of the conductive structure. The dielectric liner has a top end capped by the conductive structure.

Find Patent Forward Citations

Tsai, Wen-Che. (2025). Semiconductor device with source/drain contact (U.S. Patent No. 12288822). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12288822

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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