The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

May. 12, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chi-Hung Liao, Sanchong, TW;

Po-Ming Shih, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2005.12); G03F 1/82 (2011.12);
U.S. Cl.
CPC ...
G03F 7/70925 (2012.12); G03F 1/82 (2012.12); G03F 7/70741 (2012.12);
Abstract

A method comprises cleaning a surface of a reticle by irradiating the surface of the reticle in a first exposure device for a predetermined irradiation time. A layout pattern of the reticle is projected onto a photo resist layer of a wafer in a second exposure device by an EUV radiation. The photo resist layer is developed to generate a photo resist pattern on the wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is adjusted until the determined CDU satisfies a predetermined criterion.


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