The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Dec. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Hao Chang, Hsinchu, TW;
Ming-Wei Chen, Hsinchu, TW;
Ai-Jay Ma, Taoyuan County, TW;
Ching-Yueh Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of manufacturing a semiconductor device, in an EUV scanner, an EUV lithography operation using an EUV mask is performed on a photo resist layer formed over a semiconductor substrate. After the EUV lithography operation, the EUV mask is unloaded from a mask stage of the EUV scanner. The EUV mask is placed under a reduced pressure below an atmospheric pressure. The EUV mask is heated under the reduced pressure at a first temperature in a range from 100° C. to 350 C°. After the heating, the EUV mask is stored in a mask stocker.