The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Mar. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2005.12); H01L 21/28 (2005.12); H01L 29/06 (2005.12); H01L 29/10 (2005.12); H01L 29/49 (2005.12); H01L 29/66 (2005.12); H01L 29/78 (2005.12);
U.S. Cl.
CPC ...
H01L 29/42372 (2012.12); H01L 21/28088 (2012.12); H01L 21/28097 (2012.12); H01L 29/0649 (2012.12); H01L 29/1033 (2012.12); H01L 29/4966 (2012.12); H01L 29/66545 (2012.12); H01L 29/66795 (2012.12); H01L 29/6681 (2012.12); H01L 29/785 (2012.12); H01L 29/7853 (2012.12);
Abstract
A method includes forming a semiconductor fin; forming a gate dielectric layer over the semiconductor fin; depositing a first work function metal layer over the gate dielectric layer, the first work function metal layer having a first concentration of a work function material; depositing a second work function metal layer over the first work function metal layer, the second work function metal layer having a second concentration of the work function material, wherein the first concentration is higher than the second concentration; and forming a gate electrode over the second work function metal layer.