The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Jan. 22, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Chun-Hui Yu, Hsinchu County, TW;

Kuo-Chung Yee, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2005.12); H01L 23/00 (2005.12); H01L 23/31 (2005.12); H01L 25/065 (2022.12);
U.S. Cl.
CPC ...
H01L 24/02 (2012.12); H01L 23/3114 (2012.12); H01L 23/3128 (2012.12); H01L 24/12 (2012.12); H01L 24/19 (2012.12); H01L 24/20 (2012.12); H01L 25/065 (2012.12); H01L 24/48 (2012.12); H01L 2224/02331 (2012.12); H01L 2224/02379 (2012.12); H01L 2224/024 (2012.12); H01L 2224/12105 (2012.12); H01L 2224/18 (2012.12); H01L 2224/48091 (2012.12); H01L 2224/48227 (2012.12); H01L 2224/48464 (2012.12); H01L 2924/00014 (2012.12); H01L 2924/10252 (2012.12); H01L 2924/10253 (2012.12); H01L 2924/10272 (2012.12); H01L 2924/10329 (2012.12); H01L 2924/1203 (2012.12); H01L 2924/1304 (2012.12); H01L 2924/1433 (2012.12); H01L 2924/181 (2012.12);
Abstract

A package structure is provided. The package structure includes a die, an encapsulant and a RDL structure. The RDL structure is disposed on the die and the encapsulant. The RDL structure includes a first dielectric structure and a first redistribution layer. The first dielectric structure includes a first dielectric material layer and a second dielectric material layer on the first dielectric material layer. The first redistribution layer is embedded in the first dielectric structure and electrically connected to the die. The redistribution layer includes a first seed layer and a first conductive layer surrounded by the first seed layer. A topmost surface of the first seed layer and a topmost surface of the first conductive layer are substantially level with a top surface of the second dielectric material layer.


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