The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Nov. 07, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jen-Chun Chou, Hsinchu, TW;

Ren-Yu Chang, Hsinchu, TW;

Che-Cheng Chang, New Taipei, TW;

Chen-Hsiang Lu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2005.12); H01L 21/3065 (2005.12); H01L 21/308 (2005.12); H01L 29/66 (2005.12);
U.S. Cl.
CPC ...
H01L 21/823431 (2012.12); H01L 21/3065 (2012.12); H01L 21/3085 (2012.12); H01L 21/3086 (2012.12); H01L 21/823481 (2012.12); H01L 29/6681 (2012.12);
Abstract

Semiconductor structures and methods are provided. In one embodiment, a method of the present disclosure includes forming a plurality of semiconductor fins over a substrate, after the forming of the plurality of semiconductor fins, removing an outer semiconductor fin of the plurality of semiconductor fins, and forming a gate structure over the plurality of semiconductor fins. The plurality of semiconductor fins include more than 3 semiconductor fins and the removing recesses a portion of the substrate directly under the outer semiconductor fin.


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