The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jun. 22, 2022
Asm Ip Holding B.v., Almere, NL;
JaeOk Ko, Seoul, KR;
HeeSung Kang, Anyang-si, KR;
JaeBin Ahn, Suwon-si, KR;
SeokJae Oh, Suwon-si, KR;
WanGyu Lim, Hwaseong-si, KR;
HyounMo Choi, Hwaseong-si, KR;
YoungJae Kim, Cheonan-si, KR;
Shinya Ueda, Hwaseong-si, KR;
ASM IP Holding B.V., Almere, NL;
Abstract
Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.