The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Feb. 24, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung Hee Lee, Osan-si, KR;

Jae Yoon Kim, Seoul, KR;

Jung Hwan Moon, Seoul, KR;

Jung Hoon Bak, Suwon-si, KR;

Kyu-Baik Chang, Seoul, KR;

Jae Hoon Jeong, Hwaseong-si, KR;

Min Kyoung Joo, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05B 19/418 (2005.12); G06N 5/02 (2022.12);
U.S. Cl.
CPC ...
G05B 19/41875 (2012.12); G06N 5/02 (2012.12); G05B 2219/32368 (2012.12); G05B 2219/45031 (2012.12);
Abstract

A wafer defect test apparatus in which a defect prediction performance is improved and a simulation time is shortened is provided. The wafer defect test apparatus comprises a wafer variable generator which receives a first structural measurement data and a first process condition data of a first wafer, and a second structural measurement data and a second process condition data of a second wafer, generates a first process variable and a second process variable based on the first structural measurement data and the first process condition data, and generates a third process variable and a fourth process variable based on the second structural measurement data and the second process condition data, an abnormal wafer index generating circuit which generates a first wafer vector of the first process variable and second process variable, generates a second wafer vector of the third process variable and fourth process variable, calculates a first Euclidean distance between the first wafer vector and the second wafer vector, calculates a first Cosine distance between the first wafer vector and the second wafer vector, and generates a first abnormal wafer index of the first wafer based on a product of the first Euclidean distance and the first Cosine distance, and a prediction model generating circuit which receives a first characteristic variable which is a test result of the first wafer, and generates a wafer defect prediction model through a regression based on the first process variable, the second process variable, the first characteristic variable, and the first abnormal wafer index.


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