The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
May. 19, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
I-Wen Wang, Hsinchu, TW;
Chia-Chun Wu, Hsinchu, TW;
Hui-Zhong Zhuang, Hsinchu, TW;
Yung-Chen Chien, Hsinchu, TW;
Jerry Chang Jui Kao, Hsinchu, TW;
Xiangdong Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An IC device includes first and second power rails extending in a first direction and carrying one of a power supply or reference voltage, a third power rail extending between the first and second power rails and carrying the other of the power supply or reference voltage, and a plurality of transistors including first through fourth active areas extending between the first and second power rails, a plurality of gate structures extending perpendicularly to the first direction, and first and second conductive segments extending in the second direction across the third power rail. Each of the second and third active areas is adjacent to the third power rail, each of the first and second conductive segments is electrically connected to S/D structures in each of the second and third active areas, and the plurality of transistors is configured as one of an AOI, an OAI, or a four-input NAND gate.