The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Jun. 01, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Harry-Haklay Chuang, Hsinchu, TW;

Wen-Tuo Huang, Tainan, TW;

Wei-Cheng Wu, Hsinchu County, TW;

Yu-Ling Hsu, Tainan, TW;

Pai Chi Chou, Hsinchu, TW;

Ya-Chi Hung, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2005.12); H01L 21/02 (2005.12); H01L 21/768 (2005.12); H01L 23/00 (2005.12); H01L 25/065 (2022.12);
U.S. Cl.
CPC ...
H01L 23/481 (2012.12); H01L 21/02164 (2012.12); H01L 21/02181 (2012.12); H01L 21/02183 (2012.12); H01L 21/76898 (2012.12); H01L 24/08 (2012.12); H01L 24/80 (2012.12); H01L 25/0657 (2012.12); H01L 2224/08148 (2012.12); H01L 2224/80895 (2012.12); H01L 2224/80896 (2012.12); H01L 2225/06524 (2012.12); H01L 2225/06544 (2012.12); H01L 2924/1431 (2012.12); H01L 2924/1436 (2012.12);
Abstract

A method according to the present disclosure includes providing a first workpiece that includes a first substrate and a first interconnect structure, providing a second workpiece that includes a second substrate, a second interconnect structure, and a through via extending through a portion of the second substrate and a portion of the second interconnect structure, forming a first bonding layer on the first interconnect structure, forming a second bonding layer on the second interconnect structure, bonding the second workpiece to the first workpiece by directly bonding the second bonding layer to the first bonding layer, thinning the second substrate, forming a protective film over the thinned second substrate, forming a backside via opening through the protective film and the thinned second substrate to expose the through via, and forming a backside through via in the backside via opening to physically couple to the through via.


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