The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Jan. 20, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Qiang Wan, Hefei, CN;
Jun Xia, Hefei, CN;
Kangshu Zhan, Hefei, CN;
Sen Li, Hefei, CN;
Penghui Xu, Hefei, CN;
Tao Liu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides a manufacturing method of a semiconductor structure, including: an insulating layer includes a first dielectric layer and a second dielectric layer, a protective layer covers an upper surface of the second dielectric layer and a bottom and sidewalls of the first trench; removing part of the protective layer to expose at least part of a surface of the second dielectric layer; removing the second dielectric layer by a first wet etching process, the first wet etching process has a first etch selectivity of a material of the second dielectric layer to that of the first dielectric layer; and removing the protective layer by a second wet etching process, the second wet etching process has a second etch selectivity of a material of the protective layer to that of the first dielectric layer, and the second etch selectivity is greater than the first etch selectivity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile