The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

May. 24, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ali Taghvaei, Kanata, CA;

Atul Katoch, Kanata, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2005.12); G11C 7/12 (2005.12); G11C 7/20 (2005.12);
U.S. Cl.
CPC ...
G11C 7/1048 (2012.12); G11C 7/1066 (2012.12); G11C 7/1093 (2012.12); G11C 7/12 (2012.12); G11C 7/20 (2012.12);
Abstract

Disclosed herein are related to a memory device. In one aspect, the memory device includes a memory cell, a precharge circuit, a reset voltage control circuit, and a logic control circuit. In one aspect, the precharge circuit is configured to set a voltage of the bit line to a first voltage level. In one aspect, the reset voltage control circuit includes a transistor coupled to the bit line to set the voltage of the bit line to a second voltage level. The transistor can be arranged or operate as a diode. In one aspect, the logic control circuit is configured to cause the reset voltage control circuit to set the voltage of the bit line to the second voltage level during a reset phase and cause the precharge circuit to set the voltage of the bit line to the first voltage level during a precharge phase after the reset phase.


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