Blank mask and photomask using the same

Abstract

The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8.  [Equation 1] In the Equation 1, the ervalue is an etching rate of the first light shielding layer measured by etching with argon gas. The ervalue is an etching rate of the second light shielding layer measured by etching with argon gas. In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.