The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

May. 19, 2022
Applicant:

SK Enpulse Co., Ltd., Pyeongtaek-si, KR;

Inventors:

GeonGon Lee, Seoul, KR;

Inkyun Shin, Seoul, KR;

Seong Yoon Kim, Seoul, KR;

Suk Young Choi, Seoul, KR;

Hyung-joo Lee, Seoul, KR;

Sung Hoon Son, Seoul, KR;

Min Gyo Jeong, Seoul, KR;

Assignee:

SK enpulse Co., Ltd., Pyeongtaek-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2011.12); G03F 1/48 (2011.12);
U.S. Cl.
CPC ...
G03F 1/32 (2012.12); G03F 1/48 (2012.12);
Abstract

The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8.  [Equation 1] In the Equation 1, the ervalue is an etching rate of the first light shielding layer measured by etching with argon gas. The ervalue is an etching rate of the second light shielding layer measured by etching with argon gas. In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.


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