The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Aug. 23, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Dan Xu, Sunnyvale, CA (US);

Jun Xu, Shanghai, CN;

Erwin E. Yu, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 27/26 (2005.12); G01R 27/08 (2005.12); G11C 16/04 (2005.12); G11C 16/08 (2005.12);
U.S. Cl.
CPC ...
G01R 27/2605 (2012.12); G01R 27/08 (2012.12); G11C 16/0483 (2012.12); G11C 16/08 (2012.12);
Abstract

Apparatus having an array of memory cells and a controller for access of the array of memory cells, wherein the controller is configured to cause the apparatus to apply a reference current to a selected access line, determine a time difference between a voltage level of a near end of the selected access line being deemed to exceed a first voltage level while applying the reference current and the voltage level of the near end of the selected access line being deemed to exceed a second voltage level while applying the reference current, and determine a capacitance value of the selected access line in response to a current level of the reference current, the time difference, and a voltage difference between the second voltage level and the first voltage level.


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