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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12274049 B1

PDFFull Text
Date of Patent:
Apr. 08, 2025

Filed:

Dec. 01, 2021

Memory devices having vertical transistors and stacked storage units and methods for forming the same

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Dongxue Zhao, Wuhan, CN;

Tao Yang, Wuhan, CN;

Zhiliang Xia, Wuhan, CN;

Zongliang Huo, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

BAYES PLLC

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/33 (2023.02); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H10B 12/036 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01);
Abstract

In certain aspects, a memory device includes a vertical transistor including a semiconductor body extending in a first direction, a stack structure including interleaved dielectric layers and conductive layers each extending perpendicularly to the first direction, an electrode layer including a conductive material and coupled to a first end of the semiconductor body, and a storage layer over the electrode layer. The electrode layer and the storage layer extend in the first direction through the stack structure.

Find Patent Forward Citations

Zhao, Dongxue. (2025). Memory devices having vertical transistors and stacked storage units and methods for forming the same (U.S. Patent No. 12274049). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12274049

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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