The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
May. 04, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jiun Yi Wu, Hsinchu, TW;
Chien-Hsun Lee, Hsinchu, TW;
Chewn-Pu Jou, Hsinchu, TW;
Fu-Lung Hsueh, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor device includes forming a first transmission line over a substrate. The method includes forming a second transmission line over the substrate. The method further includes depositing a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The method further includes depositing a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts the first transmission line or the second transmission line.
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