The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Sep. 17, 2019
Applicant:

Shin-etsu Handotai Co., Ltd., Tokyo, JP;

Inventor:

Kensaku Igarashi, Nishigo-mura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02052 (2013.01); H01L 21/0201 (2013.01); H01L 21/02381 (2013.01); H01L 21/304 (2013.01); H01L 21/68735 (2013.01);
Abstract

A method for cleaning a semiconductor silicon wafer including: an ozone water treatment step after polishing in ozone water, a step of performing a first ultrasonic-wave-ozone-water treatment of cleaning at room temperature while immersing in ozone water and applying ultrasonic waves; and a step of performing a second ultrasonic-wave-ozone-water treatment of, after the step of performing the first ultrasonic-wave-ozone-water treatment, pulling out the semiconductor silicon wafer from the ozone water, performing rotation process, and cleaning at room temperature while immersing in ozone water and applying ultrasonic waves; wherein the step of performing the second ultrasonic-wave-ozone-water treatment is performed, and a hydrofluoric acid treatment step and an ozone water treatment step are performed. Accordingly, a method for cleaning a semiconductor silicon wafer and an apparatus for cleaning by which projecting defects on the wafer surface and the degradation of surface roughness can be suppressed to improve wafer quality reduce costs.


Find Patent Forward Citations

Loading…