The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Dec. 29, 2018
The Institute of Optics and Electronics, the Chinese Academy of Sciences, Chengdu, CN;
Xiangang Luo, Chengdu, CN;
Zeyu Zhao, Chengdu, CN;
Yanqin Wang, Chengdu, CN;
Ping Gao, Chengdu, CN;
Xiaoliang Ma, Chengdu, CN;
Mingbo Pu, Chengdu, CN;
Xiong Li, Chengdu, CN;
Yinghui Guo, Chengdu, CN;
Abstract
The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.